General Description
* Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A
* Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A
* High performance trench technology fo.

* Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless .

* Max rDS(on) = 16 mΩ at VGS = 10 V, ID = 8.0 A
* Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 7.5 A
* High performance trench technology for extremely low rDS(on)
* Fast switching speed
* RoHS Compliant This N-Channel MOSFET is pro.

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